Structure formula: ZnS
Crystal structure: cubic
Crystal axis: (111)
Orientation: (100); (110); (111) ±30 arc minutes.
Other orientations available on request.
Production method: Markov
Lattice paramters, A a = 5.4093
Specific resistivity, Ohm cm
undoped:
doped:
1×108…1×1012
Hall mobility, cm2/V/sec 140(e)
EPD, cm-1 < 5×105
Density of low angle boundaries, cm-1
Twins and stacking faults < 4% of hexagonal phase
Orientation accuracy: max. 1°; typ. < 0.5°
Standard wafer sizes: 5 mm x 5 mm, 10 mm x 10 mm
and round ø40 mm
Max. sizes of wafers
(at thickness 1mm):
10 mm x 10 mm, ø30 mm for (111)
10 mm x 10 mm for (100) and (110)
Standard thickness: 0.5 mm or 1 mm
Tolerances
Width/Length:
Diameter:
Thickness:
± 0.050 mm
+ 0.000 mm / -0.100 mm
± 0.050 mm
Polishing: one side or both sides polished
Optical Polishing
Chemical mechanical polishing

Other sizes and specifications on request