Structure formula: | ZnS |
---|---|
Crystal structure: | cubic |
Crystal axis: | (111) |
Orientation: | (100); (110); (111) ±30 arc minutes. Other orientations available on request. |
Production method: | Markov |
Lattice paramters, A | a = 5.4093 |
Specific resistivity, Ohm cm undoped: doped: | 1×108…1×1012 — |
Hall mobility, cm2/V/sec | 140(e) |
EPD, cm-1 | < 5×105 |
Density of low angle boundaries, cm-1 | — |
Twins and stacking faults | < 4% of hexagonal phase |
Orientation accuracy: | max. 1°; typ. < 0.5° |
Standard wafer sizes: | 5 mm x 5 mm, 10 mm x 10 mm and round ø40 mm |
Max. sizes of wafers (at thickness 1mm): | 10 mm x 10 mm, ø30 mm for (111) 10 mm x 10 mm for (100) and (110) |
Standard thickness: | 0.5 mm or 1 mm |
Tolerances Width/Length: Diameter: Thickness: | ± 0.050 mm + 0.000 mm / -0.100 mm ± 0.050 mm |
Polishing: | one side or both sides polished Optical Polishing Chemical mechanical polishing |
Other sizes and specifications on request