| Structure formula: | ZnS |
|---|---|
| Crystal structure: | cubic |
| Crystal axis: | (111) |
| Orientation: | (100); (110); (111) ±30 arc minutes. Other orientations available on request. |
| Production method: | Markov |
| Lattice paramters, A | a = 5.4093 |
| Specific resistivity, Ohm cm undoped: doped: |
1×108…1×1012 — |
| Hall mobility, cm2/V/sec | 140(e) |
| EPD, cm-1 | < 5×105 |
| Density of low angle boundaries, cm-1 | — |
| Twins and stacking faults | < 4% of hexagonal phase |
| Orientation accuracy: | max. 1°; typ. < 0.5° |
| Standard wafer sizes: | 5 mm x 5 mm, 10 mm x 10 mm and round ø40 mm |
| Max. sizes of wafers (at thickness 1mm): |
10 mm x 10 mm, ø30 mm for (111) 10 mm x 10 mm for (100) and (110) |
| Standard thickness: | 0.5 mm or 1 mm |
| Tolerances Width/Length: Diameter: Thickness: |
± 0.050 mm + 0.000 mm / -0.100 mm ± 0.050 mm |
| Polishing: | one side or both sides polished Optical Polishing Chemical mechanical polishing |
Other sizes and specifications on request