Sim. Verneuill grown
| Materials properties | ||
|---|---|---|
| Structure formula: | LaAlO3 | |
| State: | monocrystalline | |
| Crystal structure: | hexagonal | a = 4.77 Å c = 13.04 Å |
| Density: | 3.98 g/cm3 | |
| Melting point: | 2040°C | |
| Coefficient of expansion: | 6.7 * 10-6/°C 5.0 * 10-6/°C |
parallel C-axis perpendicular C-axis |
| Dielectrical constant (εr): | 9.0 11.5 |
parallel C-axis perpendicular C-axis |
| Dielectrical lost (10GHz): | 3 * 10-5 8.6 * 10-5 |
parallel C-axis perpendicular C-axis |
| Specific resistance: | 1019 W/cm | |
| Substrate properties | ||
|---|---|---|
| Production method: | Czochralski, HEM, Verneuil grown | |
| Orientation: | (0001), (1-102), (11-20) | |
| Orientation accuracy: | Until £ 0.5° | |
| Standard size: | 10mm x 10mm x thickness 1mm or 0.5mm | |
| Tolerance of length: | ± 0.02mm | |
| Tolerance of thickness: | ± 0.02mm | |
| Parallelness: | £ 0.03mm | |
| Polishing: | One side or both sides epi-polished | |
| Flatness: | £ 0.3µm / 10mm | |
| Roughness of surface: | Ra £ 10Å | |
| Scratches: | None | |
| Surface quality: | With light microscope without defects | |