Formula | Si |
Crystal Growth | |
Growth Method | Czochralski, Floating Zone |
Growth Direction | [100], [111] |
Max. Diameter (inch) | Ø 4” |
Crystallographic Properties | |
Crystal Structure Lattice Constant (nm) |
cubic a = 0.543095 |
Physical Properties | |
Color | metallic |
Melting Point (K) | 1690 |
Thermal Expansion (10-6K-1) | 2.3 |
Thermal Conductivity (W/mk) | 147 |
Band Gap (eV at 273K) | 1.106 |
Hardness (Mohs) | 7 |