Thin SrTiO3 film deposited on top of a doped Si substrate


  • Size 5x5, 10x10, 15x15 mm² (other shapes available on request)
  • Thickness 725 ± 25 μm
  • Orientation (001) ± 0.5°
  • Doping p-type
  • Resistivity 1-30 Ωcm
  • SrTiO3 layer 4.0 ± 0.2 nm
  • Roughness 3 ± 2 Å
  • Mosaicity 0.4°
  • Max temp. 800°C

Use cases:

  • Projects on oxide epitaxy with perovskites (ferroelectrics, multiferroics, colossal magnetoresistance, high-Tc superconductivity etc.)
  • Larger surfaces possible compared to regular STO crystals
  • Layer transfer (i.e., removing Si is easy, STO not)
  • MEMS processes with oxides (fabrication of oxide membranes by underetching the Si substrate)

Ideal for:

Researchers / R&D departments interested in oxide epitaxy with pervoskites (ferroelectrics, multiferroics, colossal magnetoresistance, high-Tc superconductivity, …) seeking to

  • Scale up their technology (i.e., integration with Si is the only way forward)
  • Get larger surfaces than what is possible with STO crystals
  • Produce MEMS (via underetching of Si)
  • Transfer layers of STO
  • Use doped Si as backside contact layer (usually Nb doping for STO)